參數(shù)資料
型號(hào): MPC8349VVAGF
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, 400 MHz, MICROPROCESSOR, PBGA672
封裝: 35 X 35 MM, 1.46 MM HEIGHT, 1 MM PITCH, LEAD FREE, TBGA-672
文件頁(yè)數(shù): 9/88頁(yè)
文件大?。?/td> 1014K
代理商: MPC8349VVAGF
MPC8349E PowerQUICC II Pro Integrated Host Processor Hardware Specifications, Rev. 10
Freescale Semiconductor
17
DDR SDRAM
MCS(n) output hold with respect to MCK
333 MHz
266 MHz
200 MHz
tDDKHCX
2.0
2.65
3.8
—ns
4
MCK to MDQS
333 MHz
266 MHz
200 MHz
tDDKHMH
–0.9
–1.1
–1.2
0.3
0.5
0.6
ns
5
MDQ/MECC/MDM output setup with respect to
MDQS
333 MHz
266 MHz
200 MHz
tDDKHDS,
tDDKLDS
900
1200
—ps
6
MDQ/MECC/MDM output hold with respect to
MDQS
333 MHz
266 MHz
200 MHz
tDDKHDX,
tDDKLDX
900
1200
—ps
6
MDQS preamble start
tDDKHMP
–0.25
× tMCK – 0.9
–0.25
× tMCK +0.3
ns
7
MDQS epilogue end
tDDKLME
-0.9
0.3
ns
7
Notes:
1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until outputs
(A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock reference
(K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
3. In the source synchronous mode, MCK/MCK can be shifted in 1/4 applied cycle increments through the clock control register.
For the skew measurements referenced for tAOSKEW it is assumed that the clock adjustment is set to align the
address/command valid with the rising edge of MCK.
4. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ/MECC/MDM/MDQS. For the
ADDR/CMD setup and hold specifications, it is assumed that the clock control register is set to adjust the memory clocks by
1/2 applied cycle.
5. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing (DD)
from the rising edge of the MCK(n) clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through control
of the DQSS override bits in the TIMING_CFG_2 register. In source synchronous mode, this will typically be set to the same
delay as the clock adjust in the CLK_CNTL register. The timing parameters listed in the table assume that these 2 parameters
have been set to the same adjustment value. See the
MPC8349E PowerQUICC II Pro Integrated Host Processor Family
Reference Manual, for a description and understanding of the timing modifications enabled by use of these bits.
6. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the MPC8349E.
7. All outputs are referenced to the rising edge of MCK(n) at the pins of the MPC8349E. Note that tDDKHMP follows the symbol
conventions described in note 1.
Table 14. DDR SDRAM Output AC Timing Specifications for Source Synchronous Mode (continued)
At recommended operating conditions with GVDD of 2.5 V ± 5%.
Parameter
Symbol1
Min
Max
Unit
Notes
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