參數(shù)資料
型號(hào): MPC8323EZQADDC
廠商: Freescale Semiconductor
文件頁(yè)數(shù): 82/82頁(yè)
文件大?。?/td> 0K
描述: IC MPU PWRQUICC II 516-PBGA
產(chǎn)品培訓(xùn)模塊: MPC8323E PowerQUICC II Pro Processor
標(biāo)準(zhǔn)包裝: 40
系列: MPC83xx
處理器類型: 32-位 MPC83xx PowerQUICC II Pro
速度: 266MHz
電壓: 1V
安裝類型: 表面貼裝
封裝/外殼: 516-BBGA
供應(yīng)商設(shè)備封裝: 516-FPBGA(27x27)
包裝: 托盤
配用: MPC8323E-RDB-ND - BOARD REFERENCE DESIGN
MPC8323E PowerQUICC II Pro Integrated Communications Processor Family Hardware Specifications, Rev. 4
Freescale Semiconductor
9
Power Characteristics
Figure 3. MPC8323E Power-Up Sequencing Example
3
Power Characteristics
The estimated typical power dissipation for this family of MPC8323E devices is shown in Table 5.
Table 6 shows the estimated typical I/O power dissipation for the device.
Table 5. MPC8323E Power Dissipation
CSB
Frequency (MHz)
QUICC Engine
Frequency (MHz)
Core
Frequency (MHz)
Typical
Maximum
Unit
Notes
133
200
266
0.74
1.48
W
1, 2, 3
133
200
333
0.78
1.62
W
1, 2, 3
Notes:
1. The values do not include I/O supply power (OVDD and GVDD) or AVDD. For I/O power values, see Table 6.
2. Typical power is based on a nominal voltage of VDD = 1.0 V, ambient temperature, and the core running a Dhrystone
benchmark application. The measurements were taken on the MPC8323MDS evaluation board using WC process silicon.
3. Maximum power is based on a voltage of VDD = 1.07 V, WC process, a junction TJ = 110°C, and an artificial smoke test.
Table 6. Estimated Typical I/O Power Dissipation
Interface
Parameter
GVDD (1.8 V)
GVDD (2.5 V) OVDD (3.3 V) Unit
Comments
DDR I/O
65% utilization
2.5 V
Rs = 20 Ω
Rt = 50 Ω
1 pair of clocks
266 MHz, 1
× 32 bits
0.212
0.367
W
t
90%
V
Core Voltage (VDD)
I/O Voltage (GVDD and OVDD)
0
0.7 V
PORESET
>= 32 clocks x tSYS_CLK_IN/tPCI_SYNC_IN
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