參數(shù)資料
型號(hào)： MPC5534MZQ80
廠商： Freescale Semiconductor
文件頁數(shù)： 16/60頁
文件大?。?/td> 0K
描述： MCU 1MB FLASH 80MHZ 324-PBGA
標(biāo)準(zhǔn)包裝： 60
系列： MPC55xx Qorivva
核心處理器： e200z6
芯體尺寸： 32-位
速度： 80MHz
連通性： CAN，EBI/EMI，以太網(wǎng)，SCI，SPI
外圍設(shè)備： DMA，POR，PWM，WDT
輸入/輸出數(shù)： 192
程序存儲(chǔ)器容量： 1MB（1M x 8）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 64K x 8
電壓 - 電源 (Vcc/Vdd)： 1.35 V ~ 1.65 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 40x12b
振蕩器型： 外部
工作溫度： -40°C ~ 125°C
封裝/外殼： 324-BBGA
包裝： 托盤
Electrical Characteristics
MPC5534 Microcontroller Data Sheet, Rev. 6
Freescale Semiconductor
23
3.11
H7Fb Flash Memory Electrical Characteristics
Table 14. Flash Program and Erase Specifications (TA = TL to TH)
Spec
Flash Program Characteristic
Symbol
Min.
Typical 1
1 Typical program and erase times are calculated at 25 oC operating temperature using nominal supply values.
Initial
Max. 2
2 Initial factory condition:
100program/erase cycles, 25 oC, using a typical supply voltage measured at a minimum system
frequency of 80 MHz.
Max. 3
3 The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized
but not guaranteed.
Unit
3
Doubleword (64 bits) program time 4
4 Actual hardware programming times. This does not include software overhead.
Tdwprogram
—
10
—
500
s
4
Page program time 4
Tpprogram
—
22
44 5
5 Page size is 128 bits (4 words).
500
s
7
16 KB block pre-program and erase time
T16kpperase
—
325
525
5000
ms
9
48 KB block pre-program and erase time
T48kpperase
—
435
525
5000
ms
10
64 KB block pre-program and erase time
T64kpperase
—
525
675
5000
ms
8
128 KB block pre-program and erase time
T128kpperase
—
675
1800
7500
ms
11
Minimum operating frequency for program and erase
operations 6
6 The read frequency of the flash can range up to the maximum operating frequency. There is no minimum read frequency
condition.
—25
—
MHz
Table 15. Flash EEPROM Module Life (TA = TL to TH)
Spec
Characteristic
Symbol
Min.
Typical 1
1 Typical endurance is evaluated at 25o C. Product qualification is performed to the minimum specification. For additional
information on the Freescale definition of typical endurance, refer to engineering bulletin EB619 Typical Endurance for
Nonvolatile Memory.
Unit
1a
Number of program/erase cycles per block for 16 KB, 48 KB, and
64 KB blocks over the operating temperature range (TJ)
P/E
100,000
—
cycles
1b
Number of program/erase cycles per block for 128 KB blocks over the
operating temperature range (TJ)
P/E
1000
100,000
cycles
2
Data retention
Blocks with 0–1,000 P/E cycles
Blocks with 1,001–100,000 P/E cycles
Retention
20
5
—
years
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