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參數(shù)資料
| 型號： | MP4506 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封裝： | 2-32B1B, SIP-12 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 132K |
| 代理商： | MP4506 |
MP4506
2002-11-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
ΣRth (j-a)
25
°C/W
Thermal resistance of junction to case
(4 devices operation, Tc = 25°C)
ΣRth (j-c)
5.0
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0 A
―
10
A
Collector cut-off current
ICEO
VCE = 100 V, IB = 0 A
―
10
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0 A
0.3
―
2.0
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0 A
100
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 30 mA, IB = 0 A
100
―
V
hFE (1)
VCE = 3 V, IC = 0.5 A
1000
―
DC current gain
hFE (2)
VCE = 3 V, IC = 3 A
1000
―
Collector-emitter
VCE (sat)
IC = 3 A, IB = 12 mA
―
2.0
Saturation voltage
Base-emitter
VBE (sat)
IC = 3 A, IB = 12 mA
―
2.5
V
Transition frequency
fT
VCE = 3 V, IC = 0.5 A
3
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
―
40
―
pF
Turn-on time
ton
―
0.5
―
Storage time
tstg
―
3.0
―
Switching time
Fall time
tf
IB1 = IB2 = 12 mA, duty cycle ≤ 1%
―
2.0
―
s
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Maximum forward current
IFM
―
5
A
Surge current
IFSM
t = 1 s, 1 shot
―
8
A
Forward voltage
VF
IF = 1 A, IB = 0 A
―
1.2
1.8
V
Reverse recovery time
trr
―
1.0
―
s
Reverse recovery charge
Qrr
IF = 3 A, VBE = 3 V, dIF/dt = 50 A/s
―
5
―
C
I B1
20 s
VCC = 30 V
Output
10
IB2
IB1
Input
I B2
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