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參數(shù)資料
| 型號(hào)： | MP4711 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 100 V, 0.3 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-32B1G, SIP-12 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 203K |
| 代理商： | MP4711 |
MP4711
2004-07-01
1
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV inOne)
MP4711
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
4-V gate drivability
Package with heat sink isolated to lead (SIP 12 pins)
High drain power dissipation (4-device operation)
: PT = 36 W (Tc = 25°C)
Low drain-source ON resistance: RDS (ON) = 0.17 (typ.)
High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IGSS = ±10 A (max) (VGS = ±16 V)
IDSS = 100 A (max) (VDS = 100 V)
Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 k)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
ID
5
Drain current
Pulse
IDP
20
A
Drain power dissipation
(1-device operation, Ta = 25°C)
PD
3.0
W
Ta = 25°C
5.0
Drain power dissipation
(4-device operation)
Tc = 25°C
PDT
36
W
Single pulse avalanche energy
(Note 1)
EAS
180
mJ
Avalanche current
IAR
5
A
1-device
operation
EAR
0.3
Repetitive avalanche
energy
(Note 2) 4-device
operation
EART
0.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Condition for avalanche energy (single pulse) mesurement
VDD = 25 V, starting Tch = 25°C, L = 11.6 mH, RG = 25 , IAR = 5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-32B1G
Weight: 6.0 g (typ.)
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