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參數(shù)資料
| 型號(hào)： | MP4503 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR |
| 封裝： | 2-32B1C, SIP-12 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 191K |
| 代理商： | MP4503 |
MP4503
2002-11-20
3
Electrical Characteristics (Ta = 25°C) (PNP transistor)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0 A
―
20
A
Collector cut-off current
ICEO
VCE = 80 V, IB = 0 A
―
20
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0 A
0.5
―
2.5
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0 A
100
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0 A
80
―
V
hFE (1)
VCE = 2 V, IC = 1 A
2000
―
DC current gain
hFE (2)
VCE = 2 V, IC = 3 A
1000
―
Collector-emitter
VCE (sat)
IC = 3 A, IB = 6 mA
―
1.5
Saturation voltage
Base-emitter
VBE (sat)
IC = 3 A, IB = 6 mA
―
2.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
40
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
―
55
―
pF
Turn-on time
ton
―
0.15
―
Storage time
tstg
―
0.80
―
Switching time
Fall time
tf
IB1 = IB2 = 6 mA, duty cycle ≤ 1%
―
0.40
―
s
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
IFM
―
4
A
Surge current
IFSM
t = 1 s, 1 shot
―
6
A
Forward voltage
VF
IF = 1 A, IB = 0 A
―
2.0
V
Reverse recovery time
trr
―
1.0
―
s
Reverse recovery charge
Qrr
IF = 4 A, VBE = 3 V, dIF/dt = 50 A/s
―
8
―
C
I B1
VCC = 30 V
Output
10
IB1
IB2
Input
20 s
I B2
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