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參數(shù)資料
| 型號(hào)： | MP4015 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 60 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封裝： | SIP-10 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | MP4015 |
MP4015
2006-10-27
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance from junction to
ambient
(4-device operation, Ta = 25°C)
ΣRth (j-a)
31.3
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 45 V, IE = 0 A
―
10
μA
Collector cut-off current
ICEO
VCE = 45 V, IB = 0 A
―
10
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0 A
0.3
―
10
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 10 mA, IE = 0 A
50
―
70
V
hFE (1)
VCE = 4 V, IC = 1 A
1000
―
DC current gain
hFE (2)
VCE = 4 V, IC = 3 A
1000
―
VCE (sat) (1) IC = 1 A, IB = 4 mA
―
0.9
1.4
Collector-emitter
VBE (sat) (2) IC = 3 A, IB = 10 mA
―
1.3
2.0
Saturation voltage
Base-emitter
VBE (sat)
IC = 1 A, IB = 4 mA
―
1.6
2.0
V
Base-emitter voltage
VBE
VCE = 4 V, IB = 3 A
―
1.8
2.5
V
Transition frequency
fT
VCE = 3 V, IC = 0.5 A
7
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
―
44
―
pF
Turn-on time
ton
―
0.6
―
Storage time
tstg
―
4.2
―
Switching time
Fall time
tf
IB1 = IB2 = 10 mA, duty cycle ≤ 1%
―
2.3
―
μs
Unclamped inductive load energy
ES/B
Refer to Figure 1
100
―
mJ
Note 1: Pulse width adjusted for desired ICP (ICP = 4.48 A min)
Note 2:
2
CP
S/B
I
L
2
1
E
=
I B1
20 μs
VCC = 30 V
Output
10
IB2
IB1
Input
I B2
Figure 1 Measurement Circuit of Unclamped Inductive Load Energy ES/B
T.U.T
IB1 = 0.1 A
I C
IB2 = 0.1 A
VCC = 20 V
L(coil)
=
10
mH
IB1
0
ICP
IC
VCE
IB2
PW
Clamp (C-B zener)
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