參數(shù)資料
型號: MP4015
元件分類: 功率晶體管
英文描述: 5 A, 60 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
封裝: SIP-10
文件頁數(shù): 1/4頁
文件大?。?/td> 158K
代理商: MP4015
MP4015
2006-10-27
1
TOSHIBA Power Transistor Module
Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One)
MP4015
High Power Switching Applications
Hammer Drive, Pulse Motor Drive
Inductive Load Switching
Small package by full molding (SIP 10 pins)
High collector power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
High collector current: IC (DC) = 5 A (max)
High DC current gain: hFE = 1000 (min) (VCE = 4 V, IC = 3 A)
Zener diode included between collector and base.
Unclamped inductive load energy: ES/B = 100 mJ (min)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
55
V
Collector-emitter voltage
VCEO
60 ± 10
V
Emitter-base voltage
VEBO
6
V
DC
IC
5
Collector current
Pulse
ICP
8
A
Continuous base current
IB
0.5
A
Collector power dissipation
(1-device operation)
PC
2.0
W
Collector power dissipation
(4-device operation)
PT
4.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
Marking
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-25A1A
Weight: 2.1 g (typ.)
2
1
R1 R2
9
10
R1 ≈ 5 k
R2 ≈ 150
8
3
5
4
7
6
MP4015
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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