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參數(shù)資料
| 型號(hào)： | MP4015 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power Transistor Module |
| 中文描述： | 東芝功率晶體管模塊 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 141K |
| 代理商： | MP4015 |
MP4015
2002-11-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
Σ
R
th (j-a)
31.3
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
T
L
260
°C
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 45 V, I
E
= 0 A
―
―
10
μA
Collector cut-off current
I
CEO
V
CE
= 45 V, I
B
= 0 A
―
―
10
μA
Emitter cut-off current
I
EBO
V
EB
= 6 V, I
C
= 0 A
0.3
―
10
mA
Collector-base breakdown voltage
V
(BR) CBO
I
C
= 10 mA, I
E
= 0 A
50
―
70
V
h
FE (1)
V
CE
= 4 V, I
C
= 1 A
1000
―
―
DC current gain
h
FE (2)
V
CE
= 4 V, I
C
= 3 A
1000
―
―
―
V
CE (sat) (1)
I
C
= 1 A, I
B
= 4 mA
―
0.9
1.4
Collector-emitter
V
BE (sat) (2)
I
C
= 3 A, I
B
= 10 mA
―
1.3
2.0
Saturation voltage
Base-emitter
V
BE (sat)
I
C
= 1 A, I
B
= 4 mA
―
1.6
2.0
V
Base-emitter voltage
V
BE
V
CE
= 4 V, I
B
= 3 A
―
1.8
2.5
V
Transition frequency
f
T
V
CE
= 3 V, I
C
= 0.5 A
7
―
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1 MHz
―
44
―
pF
Turn-on time
t
on
―
0.6
―
Storage time
t
stg
―
4.2
―
Switching time
Fall time
t
f
I
B1
=
I
B2
= 10 mA, duty cycle
≤
1%
―
2.3
―
μs
Unclamped inductive load energy
E
S/B
Refer to Figure 1
100
―
―
mJ
Note 1: Pulse width adjusted for desired I
CP
(I
CP
= 4.48 A min)
Note 2:
2
CP
I
S/B
L
2
1
E
I
B
20 μs
V
CC
= 30 V
Output
1
I
B2
I
B1
Input
I
B
Figure 1 Measurement Circuit of Unclamped Inductive Load Energy E
S/B
T.U.T
I
B1
= 0.1 A
I
C
I
B2
=
0.1 A
V
CC
= 20 V
L
=
I
B1
0
0
I
CP
I
C
V
CE
I
B2
PW
Clamp (C-B zener)
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