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參數(shù)資料
| 型號(hào)： | MP4005 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-25A1B, SIP-10 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 208K |
| 代理商： | MP4005 |
MP4005
2006-10-27
1
TOSHIBA Power Transistor Module
Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One)
MP4005
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Small package by full molding (SIP 10 pins)
High collector power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
High collector current: IC (DC) = ±4 A (max)
High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A)
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristics
Symbol
NPN
PNP
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
DC
IC
4
Collector current
Pulse
ICP
6
A
Continuous base current
IB
0.4
A
Collector power dissipation
(1-device operation)
PC
2.0
W
Collector power dissipation
(4-device operation)
PT
4.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-25A1B
Weight: 2.1 g (typ.)
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