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參數(shù)資料
| 型號： | MP03G260-12 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 整流器 |
| 英文描述： | 267 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | MP03, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 104K |
| 代理商： | MP03G260-12 |
3/7
www.dynexsemi.com
MP03XX260 Series
Units
mA
V
m
Test Conditions
At V
RRM, Tj = 150C
At T
vj = 150C. See note 1
At T
vj = 150C. See note 1
Parameter
Peak reverse current
Threshold voltage
Forward slope resistance
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
V
TO
r
T
Max.
30
0.84
0.667
Min.
-
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
Fig. 3 Maximum (limit) forward characteristics
Fig. 4 Surge (non-repetitive) forward current vs time
(With 50% V
RRM
at T
case
= 150C)
0
500
1000
1500
2000
Instantaneous
forward
current,
I
F
-
(A)
Instantaneous forward voltage, IF - (V)
Tj = 150C
0.5
1.0
1.5
2.0
0
5.0
2.5
7.5
10.0
12.5
Peak
half
sine
wave
forward
current
-
(kA)
110
1
2 3
5
50
10
20 30
ms
cycles at 50Hz
Duration
10
12
14
16
18
20
22
I 2
tvalue
-
(A
2s
x
10
4)
I2t
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