- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄39723 > MP03G260-12 (DYNEX SEMICONDUCTOR LTD) 267 A, 1200 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | MP03G260-12 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 267 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | MP03, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 104K |
| 代理商： | MP03G260-12 |
2/7
www.dynexsemi.com
MP03XX260 Series
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Test Conditions
Half wave resistive load
T
case = 75C
T
case = 85C
T
case = 75C
10ms half sine, T
j = 150C
V
R = 0
10ms half sine, T
j = 150C
V
R = 50% VDRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
F(AV)
I
F(RMS)
I
FSM
I2t
I
FSM
I2t
V
isol
Units
A
kA
A2s
kA
A2s
V
Max.
267
240
420
8.1
328 x 103
6.5
211 x 103
3000
Parameter
Mean forward current
RMS value
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
I2t for fusing
Isolation voltage
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M5
-
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-hs)
T
vj
T
stg
-
Units
C/kW
C
Nm (lb.ins)
g
Max.
0.21
0.22
0.23
0.05
150
5 (44)
6 (55)
950
Min.
-
–40
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MP03G260-10 | 267 A, 1000 V, SILICON, RECTIFIER DIODE |
| MP03GN440-21 | 440 A, 2100 V, SILICON, RECTIFIER DIODE |
| MP03G440-18 | 440 A, 1800 V, SILICON, RECTIFIER DIODE |
| MP03G440-21 | 440 A, 2100 V, SILICON, RECTIFIER DIODE |
| MP04HB780-44 | 782 A, 4400 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MP03HB440-18 | 制造商:n/a 功能描述:Dual Diode Module |
| MP03HBN360-08 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Dual Thyristor, Thyristor/Diode Module |
| MP03HBN360-10 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Dual Thyristor, Thyristor/Diode Module |
| MP03HBN360-12 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Dual Thyristor, Thyristor/Diode Module |
| MP03HBN360-14 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Dual Thyristor, Thyristor/Diode Module |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。