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參數(shù)資料
| 型號(hào)： | MMUN2134LT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 188K |
| 代理商： | MMUN2134LT3 |
MMUN2111LT1 SERIES
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2114LT1
35
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
010
20
30
40
50
100
10
1
02
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
2
4
6
8
1015
202530
4045
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
V
in
,INPUT
VOL
TAGE
(VOL
TS)
I C
,COLLECT
OR
CURRENT
(mA)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0
20
406080
V
CE(sat)
,MAXIMUM
COLLECT
OR
VOL
TAGE
(VOL
TS)
Figure 18. DC Current Gain
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
C
ob
,CAP
ACIT
ANCE
(pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
f = 1 MHz
lE = 0 V
TA = 25°C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
TA = –25°C
75
°C
25
°C
TA =75°C
25
°C
–25
°C
VO = 5 V
VO = 0.2 V
TA = –25°C
25
°C
75
°C
IC/IB =10
h
FE
,DC
CURRENT
GAIN
(NORMALIZED)
1
10
100
IC, COLLECTOR CURRENT (mA)
–25
°C
25
°C
TA =75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
0
2
4
6
8
1520 40 5060 7080
90
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