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參數(shù)資料
| 型號(hào)： | MMUN2134LT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 188K |
| 代理商： | MMUN2134LT3 |
MMUN2111LT1 SERIES
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DEVICE MARKING AND RESISTOR VALUES (Continued)
Device
Marking
R1 (K)
R2 (K)
MMUN2116LT1(2)
MMUN2130LT1(2)
MMUN2131LT1(2)
MMUN2132LT1(2)
MMUN2133LT1(2)
MMUN2134LT1(2)
A6F
A6G
A6H
A6J
A6K
A6L
4.7
1.0
2.2
4.7
22
∞
1.0
2.2
4.7
47
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
—
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
—
500
nAdc
Emitter-Base Cutoff Current
MMUN2111LT1
(VEB = 6.0 V, IC = 0)
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
IEBO
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
—
Vdc
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
—
Vdc
ON CHARACTERISTICS(3)
DC Current Gain
MMUN2111LT1
(VCE = 10 V, IC = 5.0 mA)
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
hFE
35
60
80
160
3.0
8.0
15
80
60
100
140
250
5.0
15
27
140
130
—
Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1
(IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/
MMUN2132LT1/MMUN2133LT1/MMUN2134LT1
VCE(sat)
—
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
MMUN2111LT1
MMUN2112LT1
MMUN2114LT1
VOL
—
0.2
Vdc
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
MMUN2113LT1
—
0.2
2. New devices. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMUN2114LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2112LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2131LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2132LT3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMUN2114T1 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相關(guān)代理商/技術(shù)參數(shù) |
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| MMUN2134RLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2135LT1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:Transistors Switching - Resistor Biased PNP DIGITAL TRANSISTOR |
| MMUN2136LT1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel |
| MMUN2137LT1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel |
| MMUN2138LT1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PNP DIGITAL TRANSISTOR (B |
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