參數(shù)資料
型號: MMSTA06-13
廠商: DIODES INC
元件分類: 小信號晶體管
英文描述: 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 0K
代理商: MMSTA06-13
DS30168 Rev. 6 - 2
1 of 4
MMSTA05/MMSTA06
www.diodes.com
MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMSTA55/MMSTA56)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Available in Lead Free/RoHS Compliant Version (Note 2)
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
M
J
L
E
D
B C
H
K
G
B
E
C
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
MMSTA05 Marking K1H, K1G (See Page 2)
MMSTA06 Marking K1G (See Page 2)
Order & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Characteristic
Symbol
MMSTA05
MMSTA06
Unit
Collector-Base Voltage
VCBO
60
80
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current - Continuous (Note 1)
IC
500
mA
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
625
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0
°
8
°
All Dimensions in mm
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
E
B
C
SPICE MODELS: MMSTA05 MMSTA06
相關(guān)PDF資料
PDF描述
MMSTA06T146 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMSTA13T146 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMSTA42 200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMSTA56T146 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMSTA92-13 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMSTA06-7 功能描述:兩極晶體管 - BJT 80V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSTA06-7-F 功能描述:兩極晶體管 - BJT 80V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSTA06T146 功能描述:兩極晶體管 - BJT NPN 80V 500MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMSTA13 制造商:ROHM 功能描述:DARLINGTON NPN SMD (Surface Mount) Transistor SOT-23 制造商:ROHM 功能描述:DARLINGTON NPN SMD (Surface Mount) Transistor SOT-23 - free partial T/R at 500.
MMSTA13_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SURFACE MOUNT DARLINGTON TRANSISTOR