參數(shù)資料
型號: MMST5551-13
廠商: DIODES INC
元件分類: 小信號晶體管
英文描述: 200 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù): 1/3頁
文件大小: 74K
代理商: MMST5551-13
DS30173 Rev. 5 - 2
1 of 3
MMST5551
www.diodes.com
Diodes Incorporated
MMST5551
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMST5401)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
200
mA
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
625
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
M
J
L
E
D
B C
H
K
G
B
E
C
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please See Ordering
Information, Note 5, on Page 2
Marking (See Page 2) : K4N
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
a
0
°
8
°
All Dimensions in mm
E
B
C
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
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參數(shù)描述
MMST5551-7 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST5551-7-F 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST5551-T 功能描述:兩極晶體管 - BJT 200mA 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST5551-TP 功能描述:兩極晶體管 - BJT 200mA 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST5551-TP-TR 制造商:Micro Commercial Components (MCC) 功能描述:Trans GP BJT NPN 160V 0.2A 3-Pin SOT-323 T/R