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參數(shù)資料
| 型號： | MMST4401P |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 0K |
| 代理商： | MMST4401P |
MMST4401
NPN Small Signal
Transistors
Features
Power dissipation: 200mW (Tamb=25
℃)
Collector current: 0.6A
Marking : K3X
Operating and Storage junction temperature range
-55
℃ to + 150℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS (2)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
60
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=100uAdc, IC=0)
6.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=35Vdc, IE=0Vdc)
---
0.1
Adc
ICEO
Collector Cutoff Current
(VCE=35Vdc, IB=0Vdc)
---
0.1
Adc
IEBO
Emitter Cutoff Current
(VEB=5Vdc, IC=0Vdc)
---
0.1
Adc
hFE
DC Current Gain
(IC=150mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=2.0Vdc)
100
40
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
---
0.4
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
---
0.95
Vdc
fT
Current Gain-Bandwidth Product
(VCE=10Vdc, IC=20mAdc, f=100MHz)
250
---
MHz
Cob
Output Capacitance
(VCB=10Vdc, f=1.0MHz, IE=0)
---
6.5
pF
td
Delay Time
tr
Rise Time
VCC=30V,IC=150uA,
VBE(off)=2V,IB1=15mA
---
15
20
ns
ts
Storage Time
tf
Fall Time
VCC=30V, IC=150mA,
IB1=IB2=15mA
---
225
30
ns
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 2
2006/05/13
SOT-323
Suggested Solder
Pad Layout
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
A
C
B
D
E
F
G
H
J
1.90
0.70
0.90
0.65
DIMENSIONS
K
TM
Micro Commercial Components
E
B
C
www.mccsemi.com
1 of 2
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMST4401-T | 功能描述:兩極晶體管 - BJT 600mA 40 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMST4401T116 | 制造商:ROHM 制造商全稱:Rohm 功能描述:NPN Medium Power Transistor |
| MMST4401T146 | 功能描述:兩極晶體管 - BJT NPN 40V 0.6A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMST4401T246 | 制造商:ROHM SEMICONDUCTOR 功能描述:TRANS GP BJT NPN 40V 0.6A 3P TR |
| MMST4401-TP | 功能描述:兩極晶體管 - BJT 600mA 40 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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