參數(shù)資料
型號： MMST2907A-13
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 78K
代理商： MMST2907A-13
DS30081 Rev. 6 - 2
2 of 4
MMST2907A
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
-60
V
IC = -10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-60
V
IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
V
IE = -10
mA, IC = 0
Collector Cutoff Current
ICBO
-10
nA
mA
VCB = -50V, IE = 0
VCB = -50V, IE = 0, TA = 125
°C
Collector Cutoff Current
ICEX
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
Base Cutoff Current
IBL
-50
nA
VCE = -30V, VEB(OFF) = -0.5V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
75
100
50
300
IC = -100A, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.4
-1.6
V
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base- Emitter Saturation Voltage
VBE(SAT)
-1.3
-2.6
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—30
pF
VEB = -2.0V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
200
MHz
VCE = -20V, IC = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
toff
45
ns
Delay Time
td
10
ns
VCC = -30V, IC = -150mA,
IB1 = -15mA
Rise Time
tr
40
ns
Turn-Off Time
toff
100
ns
Storage Time
ts
80
ns
VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
Fall Time
tf
30
ns
Ordering Information
Device
Packaging
Shipping
MMST2907A-7
SOT-323
3000/Tape & Reel
Notes:
2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMST2907A-7-F.
Marking Information
(Note 4)
K3F = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
K3F
YM
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
相關(guān)PDF資料
PDF描述
MMST2907AT146 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMST2907A-7 功能描述:兩極晶體管 - BJT -60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST2907A-7-F 功能描述:兩極晶體管 - BJT -60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST2907A-T 功能描述:兩極晶體管 - BJT -600mA -60V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST2907AT146 功能描述:兩極晶體管 - BJT PNP 60V 0.6A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST2907A-TP 功能描述:兩極晶體管 - BJT -600mA -60V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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