參數(shù)資料
型號： MMST2907A
廠商： LITE-ON SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-3
文件頁數(shù)： 1/6頁
文件大?。?/td> 276K
代理商： MMST2907A
MMST2907A
PNP General Purpose Transistor
FEATURES
Ideal for Medium Power Amplification and Switching
Complementary PNP Type available(MMST2222A)
MECHANICAL DATA
Case: SOT-323 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-600
mA
Collector Power Dissipation
PC
200
mW
Thermal Resistance, junction to Ambient
RΘJA
500
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=-10A,IE=0
VCBO
-60
V
Collector-emitter breakdown voltage
IC=-10mA,IB=0
VCEO
-60
V
Emitter-base breakdown voltage
IE=-10A,IC=0
VEBO
-5
V
Collector-base cut-off current
VCB=-50V,IE=0
ICBO
-100
nA
Collector-emitter cut-off current
VCE=-30V,IB=0
ICEO
-100
nA
Emitter-base cut-off current
VEB=-3V,IC=0
IEBO
-100
nA
VCE=-10V,IC=-0.1mA
hFE1
75
V
VCE=-10V,IC=-1mA
hFE2
100
V
VCE=-10V,IC=-10mA
hFE3
100
V
VCE=-10V,IC=-150mA
hFE4
100
300
V
DC current gain
VCE=-10V,IC=-500mA
hFE5
50
V
IC=-150mA,IB=-15mA
VCE(sat)1
-0.4
V
Collector-emitter saturation voltage
IC=-500mA,IB=-50mA
VCE(sat)2
-1.6
V
IC=-150mA,IB=-15mA
VBE(sat)1
-1.3
V
Base-emitter saturation voltage
IC=-500mA,IB=-50mA
VBE(sat)2
-2.6
V
Transition frequency
VCE=-20V,IC=-50mA,
f=100MHz
fT
200
MHz
Output capacitance
VCB=-10V,IE=0,f=0.1MHz
Cobo
8
pF
Input capacitance
VEB=-2V,IC=0,f=0.1MHz
Cib
30
pF
Delay time
Td
10
nS
Rise time
VCC=-30V, VBE(off)=-1.5V,
IC=-150mA , IB1=-15mA
Tr
40
nS
Storage time
Ts
80
nS
Fall time
VCC=-30V, IC=-150mA
IB1=-IB2=-15mA
Tf
30
nS
REV. 0, Jun-2009, KSPR18
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMST2907A_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST2907A_11 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Small Signal Transistors
MMST2907A_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMST2907A-7 功能描述:兩極晶體管 - BJT -60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMST2907A-7-F 功能描述:兩極晶體管 - BJT -60V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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