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參數(shù)資料
| 型號： | MMST2222A |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 611K |
| 代理商： | MMST2222A |
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= 10mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 10Adc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 10Adc, IC= 0)
Collector Cutoff Current (VCE= 60Vdc,VEB(off)= 3.0Vdc
Collector Cutoff Current (VCB= 60Vdc, IE= 0)
(VCB= 60Vdc, IE= 0, TA= 125
OC)
Emitter Cutoff Current (VEB= 3.0Vdc, IC= 0)
Base Cutoff Current (VCE= 60Vdc, VEB(off)= 3.0Vdc
DC Current Gain (IC= 100A, VCE= 10Vdc)
Collector-Emitter Saturation Voltage (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, IB= 50mAdc)
(IC= 1.0mAdc, VCE= 10Vdc)
(IC= 10mAdc, VCE= 10Vdc)
(IC= 150mAdc, VCE= 10Vdc)
(IC= 500mAdc, VCE= 10Vdc)
(IC= 10mAdc, VCE= 10Vdc,TA=-55
OC)
(IC= 150mAdc, VCE= 1.0Vdc)
V(BR)CEO
40
-
Vdc
V(BR)CBO
75
-
Vdc
V(BR)EBO
6.0
-
Vdc
ICEX
ICBO
IEBO
IBL
-
10
-
10
-
10
20
Adc
nAdc
fT
300
-
MHz
hFE
35
-
50
-
VCE(sat)
75
-
100
300
Adc
Symbol
Min
Max
Unit
Base-Emitter Saturation Voltage (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, IB= 50mAdc)
Current-Gain-Bandwidth Product (IC= 20mAdc, VCE= 20Vdc, f= 100MHz)
Cibo
Cobo
-
25
pF
td
tr
ts
tf
NF
-
4.0
ns
dB
ns
-
8
225
60
10
25
Input Capacitance (VEB=0.5Vdc, IC= 0, f= 1.0MHz)
Output Capacitance (IE= 0, VCB= 10Vdc, f= 1.0MHz)
Noise Figure (IC= 100Adc, VCE= 10Vdc, RS= 1.0k, f= 1.0kHz)
(VCC= 30Vdc, VBE(off)= 0.5Vdc, IC= 150mAdc, IB1= 15mAdc)
(VCC= 30Vdc, IC= 150mAdc, IB1= IB2= 15mAdc)
VBE(sat)
40
-
50
35
-
0.3
1.0
0.6
-
1.2
2.0
Delay Time
Rise Time
Storage Time
Fall Time
RECTRON
NOTES : 1. Short duration test pulse used to minimize self-heating effect.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMST2222A_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST2222A_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Plastic-Encapsulate Transistors |
| MMST2222A_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMST2222A-7 | 功能描述:兩極晶體管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMST2222A-7-F | 功能描述:兩極晶體管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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