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參數(shù)資料
| 型號(hào)： | MMSF7N03ZR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 7.5 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | MMSF7N03ZR2 |
MMSF7N03Z
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(1) (3)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
35
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
0.03
0.15
2.0
10
Adc
Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0)
IGSS
—
1.3
5.0
Adc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(1) (3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
2.0
5.5
3.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(1) (3)
(VGS = 10 Vdc, ID = 7.5 Adc)
(VGS = 4.5 Vdc, ID = 3.8 Adc)
RDS(on)
—
22
30
40
m
Forward Transconductance (VDS = 3.0 Vdc, ID = 3.8 Adc)
(1)
gFS
4.0
9.5
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vdc V
0 Vdc
Ciss
—
750
1500
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
340
680
Transfer Capacitance
f = 1.0 MHz)
Crss
—
45
90
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
15 Vd
I
5 0 Ad
td(on)
—
40
80
ns
Rise Time
(VDS = 15 Vdc, ID = 5.0 Adc,
tr
—
90
180
Turn–Off Delay Time
( DS
, D
,
VGS = 10 Vdc, RG = 6 ) (1)
td(off)
—
470
940
Fall Time
tf
—
170
340
Turn–On Delay Time
(V
15 Vd
I
5 0 Ad
td(on)
—
120
240
ns
Rise Time
(VDD = 15 Vdc, ID = 5.0 Adc,
tr
—
350
700
Turn–Off Delay Time
( DD
, D
,
VGS = 4.5 Vdc, RG = 6 ) (1)
td(off)
—
430
860
Fall Time
tf
—
140
280
Gate Charge
(V
24 Vd
I
5 0 Ad
QT
—
34
48
nC
(VDS = 24 Vdc, ID = 5.0 Adc,
Q1
—
3.5
—
( DS
, D
,
VGS = 10 Vdc) (1)
Q2
—
9.5
—
Q3
—
6.5
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 7.5 Adc, VGS = 0 Vdc) (1)
(IS = 7.5 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.83
0.67
1.6
—
Vdc
Reverse Recovery Time
(I
7 5 Adc V
0 Vdc
trr
—
110
—
ns
(IS = 7.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (1)
ta
—
22
—
dIS/dt = 100 A/s) (1)
tb
—
90
—
Reverse Recovery Storage Charge
QRR
—
0.17
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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