參數(shù)資料
型號(hào): MMSF5N02HDR2
廠商: ON SEMICONDUCTOR
元件分類(lèi): JFETs
英文描述: 8.2 A, 20 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MINIATURE, CASE 751-07, SOP-8
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 263K
代理商: MMSF5N02HDR2
MMSF5N02HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
41
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.02
1.0
10
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.0
2.0
Vdc
mV/°C
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 5.0 Adc)
(VGS = 4.5 Vdc, ID = 2.5 Adc)
RDS(on)
0.0185
0.0219
0.025
0.040
Ohm
Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc)
gFS
3.0
12
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1130
1582
pF
Output Capacitance
Coss
464
650
Transfer Capacitance
Crss
117
235
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
15
30
ns
Rise Time
tr
93
185
TurnOff Delay Time
td(off)
35
70
Fall Time
tf
40
80
TurnOn Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
9.0
Rise Time
tr
53
TurnOff Delay Time
td(off)
56
Fall Time
tf
39
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 5.0 Adc,
VGS = 10 Vdc)
QT
30.3
43
nC
Q1
3.0
Q2
7.5
Q3
6.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 5.0 Adc, VGS = 0 Vdc)
(IS = 5.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.82
0.69
1.0
Vdc
Reverse Recovery Time
See Figure 15
(IS = 5.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
32
ns
ta
24
tb
8.0
Reverse Recovery Stored Charge
QRR
0.045
μC
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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