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參數(shù)資料
| 型號(hào)： | MMSF4P01HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 5.1 A, 12 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 259K |
| 代理商： | MMSF4P01HDR2 |
MMSF4P01HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
I DSS
,LEAKAGE
(nA)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
048
Figure 3. OnResistance versus
GateToSource Voltage
Figure 4. OnResistance versus Drain Current
and Gate Voltage
10
1000
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
VDS ≥ 10 V
55
°C
25
°C
ID = 2 A
04
8
50
25
0
25
50
75
100
125
150
0
3
6
12
VGS = 0 V
TJ = 125°C
TJ = 25°C
VGS = 2.7 V
100
9
100
°C
26
6
2
4.5 V
8
6
4
2
0
TJ = 100°C
0.16
0.12
0.08
0.04
0
0.1
0.09
0.08
0.06
8
6
4
2
0
1
1.6
1.4
2
1.2
1.8
2.4
2.2
0.07
0
0.5
1
2
1.5
VGS = 4.5 V
ID = 4 A
TJ = 25°C
4.5 V
0
0.6
0.4
1
0.2
0.8
1.4
1.6
1.2
1.8
2
TJ = 25°C
3.1 V
VGS = 8 V
1.5 V
2.5 V
1.7 V
1.9 V
2.1 V
2.3 V
2.7 V
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