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參數(shù)資料
| 型號： | MMSF4P01HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 5.1 A, 12 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 259K |
| 代理商： | MMSF4P01HDR2 |
MMSF4P01HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 1.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
12
22
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
Adc
GateBody Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
0.7
0.95
2.7
1.1
Vdc
mV/
°C
Static DraintoSource OnResistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
RDS(on)
0.073
0.08
0.09
Ohm
Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)
gFS
3.0
7.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
10 Vd
V
0Vd
Ciss
1270
1700
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
935
1300
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
420
600
SWITCHING CHARACTERISTICS (Note 4.)
TurnOn Delay Time
td(on)
25
35
ns
Rise Time
(VDS = 6.0 Vdc, ID = 4.0 Adc,
VGS =27Vdc
tr
250
350
TurnOff Delay Time
VGS = 2.7 Vdc,
RG = 6.0 )
td(off)
58
80
Fall Time
RG 6.0 )
tf
106
150
TurnOn Delay Time
td(on)
17
25
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS =45Vdc
tr
71
100
TurnOff Delay Time
VGS = 4.5 Vdc,
RG = 6.0 )
td(off)
95
140
Fall Time
RG 6.0 )
tf
106
150
Gate Charge
QT
24
34
nC
(VDS = 10 Vdc, ID = 4.0 Adc,
Q1
2.4
(VDS
10 Vdc, ID
4.0 Adc,
VGS = 4.5 Vdc)
Q2
11.4
Q3
8.4
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3.)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
1.3
1.1
1.8
Vdc
Reverse Recovery Time
trr
134
ns
(IS = 4.0 Adc, VGS = 0 Vdc,
ta
66
(IS
4.0 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
68
Reverse Recovery Stored Charge
QRR
0.33
C
1. Negative sign for PChannel device omitted for clarity.
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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