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參數(shù)資料
| 型號(hào)： | MMSF4N01HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 5800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 253K |
| 代理商： | MMSF4N01HDR2 |
MMSF4N01HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.4
0.8
0
2
4
8
TJ = 25°C
1.2
6
1.6
2
4.5 V
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
1
1.2
1.4
2.2
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
02
4
8
0.03
0.04
0.05
0.06
0.07
02
4
8
0.030
0.035
0.040
0.050
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
GateToSource Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
02
4
12
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 25°C
VGS = 0 V
TJ = 25°C
ID = 2 A
VGS = 2.7 V
VGS = 4.5 V
ID = 4 A
1.6
1.8
2
6
4.5 V
50
25
0
25
50
75
100
125
150
TJ = 125°C
10
810
100
°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
2
4
8
6
25
°C
100
°C
TJ = 55°C
0.045
6
0.2
0.6
1
1.4
1.8
VGS = 8 V
3.1 V
2.7 V
2.5 V
2.3 V
2.1 V
1.9 V
1.5 V
1.7 V
1.3 V
0
0.5
1
2
1.5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMSF4P01HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS |
| MMSF5N02HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
| MMSF5N03HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS |
| MMSF5N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
| MMSF5P02HD | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 8.7 AMPERES 20 VOLTS |
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