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參數(shù)資料
| 型號(hào)： | MMSF4N01HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 253K |
| 代理商： | MMSF4N01HDR2 |
MMSF4N01HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
2.0
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
Adc
GateBody Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
VGS(th)
0.6
0.8
2.8
1.1
Vdc
mV/
°C
Static DrainSource OnResistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
RDS(on)
0.035
0.043
0.045
0.055
Ohm
Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)
gFS
3.0
6.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
10 Vd
V
0Vd
Ciss
425
595
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
270
378
Transfer Capacitance
f = 1.0 MHz)
Crss
115
230
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
td(on)
13
26
ns
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS =27Vdc
tr
60
120
TurnOff Delay Time
VGS = 2.7 Vdc,
RG = 2.3 )
td(off)
20
40
Fall Time
RG
2.3
)
tf
29
58
TurnOn Delay Time
td(on)
10
20
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS =45Vdc
tr
42
84
TurnOff Delay Time
VGS = 4.5 Vdc,
RG = 2.3 )
td(off)
24
48
Fall Time
RG
2.3
)
tf
28
56
Gate Charge
SFi
8
QT
9.2
13
nC
See Figure 8
(VDS = 10 Vdc, ID = 4.0 Adc,
Q1
1.3
(VDS
10 Vdc, ID
4.0 Adc,
VGS = 4.5 Vdc)
Q2
3.5
Q3
3.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.95
0.78
1.1
Vdc
Reverse Recovery Time
trr
38
ns
(IS = 4.0 Adc, VGS = 0 Vdc,
ta
17
(IS
4.0 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s)
tb
22
Reverse Recovery Stored Charge
QRR
0.028
C
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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| MMSF4P01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS |
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