- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369920 > MMSF3P03HDR2 (MOTOROLA INC) TMOS P-CHANNEL FIELD EFFECT TRANSISTORS PDF資料下載
參數(shù)資料
| 型號(hào)： | MMSF3P03HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS P-CHANNEL FIELD EFFECT TRANSISTORS |
| 中文描述： | 4.6 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大小： | 329K |
| 代理商： | MMSF3P03HDR2 |
10
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
STYLE 13:
PIN 1.
N.C.
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
2.
3.
4.
5.
6.
7.
8.
CASE 751–05
SO–8
ISSUE P
SEATING
1
4
5
8
C
K
4
A
0.25 (0.010)
M
T B
S
S
0
B
M
8X
D
R
M
J
X
F
–A–
–B–
–T–
DIM
A
B
C
D
F
G
J
K
M
P
R
MIN
4.80
3.80
1.35
0.35
0.40
1.27 BSC
0.18
0.10
0
5.80
0.25
MAX
5.00
4.00
1.75
0.49
1.25
MILLIMETERS
0.25
0.25
7
6.20
0.50
G
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE/Locations Not Listed
: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN
: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX
: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
INTERNET
: http://Design–NET.com
ASIA/PACIFIC
: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MMSF3P03HD/D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMSF3PO3HD | TMOS P-CHANNEL FIELD EFFECT TRANSISTORS |
| MMSZ5227BT1 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| MMSZ5229BS | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| MMSZ5255BS | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| MMSZ5225BS | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMSF4205R2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 10A 8-Pin SOIC T/R |
| MMSF4N01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS MOSFET 5.8 AMPERES 20 VOLTS |
| MMSF4N01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMSF4P01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS |
| MMSF5N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。