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參數(shù)資料
| 型號： | MMSF3P02HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 5.6 A, 20 V, 0.095 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 302K |
| 代理商： | MMSF3P02HDR2 |
MMSF3P02HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
3
4
6
1
5
2
0
0.2
0.4
0.6
0.8
2
0
3
4
6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
1.6
1.8
2
2.2
2.4
3.4
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
1
2
3
4
10
0.4
0.6
R
DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
1
2
3
4
6
0.05
0.07
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.80
1.20
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VDS ≥ 10 V
TJ = 100°C
25
°C
– 55
°C
VGS = 0 V
ID = 1.5 A
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
ID = 3.0 A
1
1.2
3.7 V
3.1 V
2.5 V
2.6
1
1.4
1.6
1.8
2.8
3
3.2
0.2
5
6
7
8
9
10 V
– 50
0
25
50
75
100
125
150
TJ = 125°C
5
0.09
0.06
0.90
2
0
5
1.00
1.10
0
4
8
12
16
20
0.08
2.7 V
2.9 V
VGS = 10 V
3.3 V
3.5 V
3.9 V
4.5 V
TJ = 25°C
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| MMSF3P02HDR2G | 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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