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參數(shù)資料
| 型號： | MMSF3P02HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 5.6 A, 20 V, 0.095 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 302K |
| 代理商： | MMSF3P02HDR2 |
MMSF3P02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
24
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.5
4.0
2.0
—
Vdc
mV/
°C
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
—
0.06
0.08
0.075
0.095
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
3.0
7.2
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
1010
1400
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
740
920
Transfer Capacitance
f = 1.0 MHz)
Crss
—
260
490
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 )
td(on)
—
25
50
ns
Rise Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 )
tr
—
135
270
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 )
td(off)
—
54
108
Fall Time
G = 6.0 )
tf
—
84
168
Turn–On Delay Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 6.0 )
td(on)
—
16
32
Rise Time
(VDD = 10 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 6.0 )
tr
—
40
80
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 )
td(off)
—
110
220
Fall Time
G = 6.0 )
tf
—
97
194
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
QT
—
33
46
nC
See Figure 8
(VDS = 16 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
Q1
—
3.0
—
(VDS = 16 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
Q2
—
11
—
Q3
—
10
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
1.35
0.96
1.75
—
Vdc
Reverse Recovery Time
See Figure 15
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
76
—
ns
See Figure 15
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
32
—
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
44
—
Reverse Recovery Stored Charge
QRR
—
0.133
—
C
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
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