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參數(shù)資料
| 型號(hào)： | MMSF3P02HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS |
| 中文描述： | 5.6 A, 20 V, 0.095 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 302K |
| 代理商： | MMSF3P02HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)(1)
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
20
20
±
20
5.6
3.6
30
2.5
– 55 to 150
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C (2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 14
mH, RG = 25
)
Thermal Resistance — Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
DEVICE MARKING
Apk
Watts
°
C
mJ
567
R
θ
JA
TL
50
260
°
C/W
°
C
S3P02
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
MMSF3P02HDR2
13
″
12 mm embossed tape
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Tape Width
Quantity
2500 units
Order this document
by MMSF3P02HD/D
SEMICONDUCTOR TECHNICAL DATA
CASE 751–05, Style 13
SO–8
N–C
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
D
S
G
SINGLE TMOS
POWER MOSFET
3.0 AMPERES
20 VOLTS
RDS(on) = 0.075 OHM
Motorola Preferred Device
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 5
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| MMSF3P02HDR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF3P02HDR2G | 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF3P02HDR2SG | 功能描述:MOSFET P-CH 20V 5.6A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMSF3P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS |
| MMSF4205R2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 10A 8-Pin SOIC T/R |
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