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參數(shù)資料
| 型號(hào)： | MMSF7N03Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | FERRITE CHIP 120 OHM 200MA 0603 |
| 中文描述： | 功率MOSFET單任務(wù)操作系統(tǒng)7.5安培30伏 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | MMSF7N03Z |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
!
EZFETs
are an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface
mount MOSFETs feature ultra low RDS(on) amd true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. EZFET devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives.
Zener Protected Gates Provide Electrostatic Discharge Protection
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Designed to withstand 200V Machine Model and 2000V Human Body Model
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Value
30
30
±
15
7.5
5.6
60
2.5
20
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C (1)
Drain Current
— Continuous @ TA = 70
°
C (1)
Drain Current
— Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25
°
C (1)
Linear Derating Factor (1)
Total Power Dissipation @ TA = 25
°
C (2)
Linear Derating Factor (2)
Apk
Watts
mW/
°
C
Watts
mW/
°
C
°
C
mJ
PD
1.6
12
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0 mH, RG = 25
)
Thermal Resistance — Junction to Ambient (1)
— Junction to Ambient (2)
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ 10 Seconds)
(2) When mounted on 1 inch square FR–4 or G–10 board (VGS = 10 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
TJ, Tstg
EAS
– 55 to 150
450
R
θ
JA
50
80
°
C/W
ORDERING INFORMATION
S7N03Z
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2500 units
MMSF7N03ZR2
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the
Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF7N03Z/D
SINGLE TMOS
POWER MOSFET
7.5 AMPERES
30 VOLTS
RDS(on) = 0.030 OHM
CASE 751–05, Style 12
SO–8
Motorola Preferred Device
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
D
S
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMSF7N03ZR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMSF7P03HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 7 A, 30 V, P−Channel SO−8 |
| MMSF7P03HDR2 | 功能描述:MOSFET 30V 7A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF7P03HDR2G | 功能描述:MOSFET PFET SO8S 30V 7A 35mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MM-SIO-R-01 | 功能描述:單板計(jì)算機(jī) MiniModule Super I/O for CM 730 Legacy IO RoHS:否 制造商:Ampro By ADLINK 外觀尺寸:EPIC 處理器類型:Intel Atom D510 頻率:1.66 GHz 存儲(chǔ)容量:2 GB (max) 存儲(chǔ)類型:DDR2, L2 Cache 接口類型:Ethernet, PS/2, SATA, Serial, USB 工作電源電壓:5 V, 12 V 功耗:13 W 最大工作溫度:+ 70 C 尺寸:165.1 mm x 114.3 mm |
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