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參數(shù)資料
| 型號： | MMH3111NT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Heterostructure Field Effect Transistor |
| 中文描述： | 異質(zhì)結(jié)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 307K |
| 代理商： | MMH3111NT1 |
MMH3111NT1
1
RF Device Data
Freescale Semiconductor
MMH3111NT1
250-4000 MHz, 12 dB
22.5 dBm
GaAs HFET
Heterostructure Field Effect
Transistor (GaAs HFET)
Broadband High Linearity Amplifier
The MMH3111NT1 is a General Purpose Amplifier that is internally
input and output prematched. It is designed for a broad range of Class A,
small-signal, high linearity, general purpose applications. It is suitable
for applications with frequencies from 250 to 4000 MHz such as Cellular,
PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF.
Features
Frequency: 250 to 4000 MHz
P1dB: 22.5 dBm @ 900 MHz
Small-Signal Gain: 12 dB @ 900 MHz
Third Order Output Intercept Point: 44 dBm @ 900 MHz
Single 5 Volt Supply
Internally Prematched to 50 Ohms
Internally Biased
Low Cost SOT-89 Surface Mount Package
RoHS Compliant
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
CASE 1514-02, STYLE 2
SOT-89
PLASTIC
123
Table 1. Typical Performance
(1)
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small-Signal Gain
(S21)
G
p
12
11.3
10
dB
Input Return Loss
(S11)
IRL
-14
-15
-16
dB
Output Return Loss
(S22)
ORL
-14
-19
-14
dB
Power Output @1dB
Compression
P1db
22.5
22
22
dBm
Third Order Output
Intercept Point
IP3
44
44
42
dBm
1. V
DD
= 5 Vdc, T
C
= 25
°
C, 50 ohm system
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
(2)
V
DD
6
V
Supply Current
(2)
I
DD
300
mA
RF Input Power
P
in
10
dBm
Storage Temperature Range
T
stg
-65 to +150
°
C
Junction Temperature
(3)
T
J
150
°
C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150
°
C.
Table 3. Thermal Characteristics
(V
DD
= 5 Vdc, I
DD
= 150 mA, T
C
= 25
°
C)
Characteristic
Symbol
Value
(4)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
37.5
°
C/W
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MMH3111NT1
Rev. 0, 11/2007
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2007. All rights reserved.
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