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參數(shù)資料
| 型號(hào)： | MMG3013NT1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| 中文描述： | 異質(zhì)結(jié)雙極晶體管技術(shù)（InGaP HBT寬頻） |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 204K |
| 代理商： | MMG3013NT1 |
MMG3013NT1
1
RF Device Data
Freescale Semiconductor
MMG3013NT1
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3013NT1 is a General Purpose Amplifier that is internally
input matched and internally output matched. It is designed for a broad
range of Class A, small-signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 0 to 6000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small-signal RF.
Features
Frequency: 0-6000 MHz
P1dB: 20.5 dBm @ 900 MHz
Small-Signal Gain: 20 dB @ 900 MHz
Third Order Output Intercept Point: 36 dBm @ 900 MHz
Single 5 Volt Supply
Internally Matched to 50 Ohms
Low Cost SOT-89 Surface Mount Package
Pb-Free and RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
0-6000 MHz, 20 dB
20.5 dBm
InGaP HBT
123
CASE 1514-01, STYLE 1
SOT-89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic
Symbol
900
MHz
2140
MHz
3500
MHz
Unit
Small-Signal Gain
(S21)
G
p
20
17
14.5
dB
Input Return Loss
(S11)
IRL
-17
-19
-15
dB
Output Return Loss
(S22)
ORL
-11
-9
-12
dB
Power Output @1dB
Compression
P1db
20.5
20.5
19
dBm
Third Order Output
Intercept Point
IP3
36
34
32
dBm
1. V
CC
= 5 Vdc, T
C
= 25
°
C, 50 ohm system
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
(2)
V
CC
7
V
Supply Current
(2)
I
CC
300
mA
RF Input Power
P
in
12
dBm
Storage Temperature Range
T
stg
-65 to +150
°
C
Junction Temperature
(3)
T
J
150
°
C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150
°
C.
Table 3. Thermal Characteristics
(V
CC
= 5 Vdc, I
CC
= 90 mA, T
C
= 25
°
C)
Characteristic
Symbol
Value
(4)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
42
°
C/W
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MMG3013NT1
Rev. 2, 8/2005
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2005. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMG3013NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMG3013NT1_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor |
| MMG3014NT1 | 功能描述:射頻放大器 24DBM RF GenPurp Amp InGaP HBT RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MMG3014NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Heterojunction Bipolar Transistor Technology (InGaP HBT) |
| MMG3014NT1-CUT TAPE | 制造商:Freescale 功能描述:MMG3014 Series 4 GHz 19.5 dB Gain 25 dBm Out InGaP HBT - SOT-89 |
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