參數(shù)資料
型號(hào): MMFT3055VT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
封裝: CASE 318E-04, 4 PIN
文件頁數(shù): 15/17頁
文件大?。?/td> 193K
代理商: MMFT3055VT3
MMFT3055V
http://onsemi.com
634
INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.079
2.0
0.15
3.8
0.248
6.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
0.091
2.3
0.091
2.3
mm
inches
SOT–223 POWER DISSIPATION
The power dissipation of the SOT–223 is a function of
the drain pad size. This can vary from the minimum pad
size for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, R
θJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–223 package, PD can be calculated as
follows:
PD =
TJ(max) – TA
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 943 milliwatts.
PD =
175
°C – 25°C
159
°C/W
= 943 milliwatts
The 159
°C/W for the SOT–223 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 943
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–223 package. One is to
increase the area of the drain pad. By increasing the area of
the drain pad, the power dissipation can be increased.
Although one can almost double the power dissipation with
this method, one will be giving up area on the printed
circuit board which can defeat the purpose of using surface
mount technology. A graph of R
θJA versus drain pad area is
shown in Figure 17.
相關(guān)PDF資料
PDF描述
MMFT6661T1 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT6661T3 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT960T3 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMPQ2222R1 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MMPQ2222R2 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMFT5P03HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS
MMFT5P03HDT1 功能描述:MOSFET P-CH 30V 3.7A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
MMFT5P03HDT3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS P-CHANNEL FIELD FEECT TRANSISTOR
MMFT6N03HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER 6.0 AMPERES 30 VOLTS
MMFT960T1 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube