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參數資料
| 型號： | MMFT3055VT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數： | 10/17頁 |
| 文件大小： | 193K |
| 代理商： | MMFT3055VT3 |
MMFT3055V
http://onsemi.com
629
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (Note 3.)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
–
63
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Note 3.)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
–
2.8
5.6
4.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (Note 3.)
(VGS = 10 Vdc, ID = 0.85 Adc)
RDS(on)
–
0.115
0.13
Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 1.7 Adc)
(VGS = 10 Vdc, ID = 0.85 Adc, TJ = 150°C)
VDS(on)
–
0.27
0.25
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 1.7 Adc)
gFS
1.0
2.7
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
360
500
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
110
150
Transfer Capacitance
f = 1.0 MHz)
Crss
–
25
50
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
–
8.0
20
ns
Rise Time
(VDD = 30 Vdc, ID = 1.7 Adc,
VGS =10Vdc
tr
–
9.0
20
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
–
32
60
Fall Time
RG 9.1 )
tf
–
18
40
Gate Charge
QT
–
13
20
nC
(VDS = 48 Vdc, ID = 1.7 Adc,
Q1
–
2.0
–
(VDS 48 Vdc, ID 1.7 Adc,
VGS = 10 Vdc)
Q2
–
5.0
–
Q3
–
4.0
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (Note 1.)
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc,
TJ = 150°C)
VSD
–
0.85
0.7
1.6
–
Vdc
Reverse Recovery Time
trr
–
40
–
ns
(IS 17Adc VGS 0Vdc
ta
–
34
–
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
–
6.0
–
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
–
0.089
–
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
–
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
–
7.5
–
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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