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參數(shù)資料
| 型號： | MMFT3055VT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | LEAD FREE, CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 207K |
| 代理商： | MMFT3055VT1G |
MMFT3055V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
01
2
3
4
5
0
1.5
2.5
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
23
4
5
6
0
1.5
3
4
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
0.5
1
2.5
4
0
0.05
0.1
0.15
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
1
3.5
4
0.050
0.065
0.140
0.170
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0.6
0.8
1.2
1.6
020
50
60
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25°C
100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 0.85 A
5 V
4 V
3.5 V
4.5 V
0.5
1
2
2.5
3.5
4.5
5.5
0.5
2
3.5
VGS = 10 V
TJ = 100°C
25°C
55°C
2
3.5
0.5
2
2.5
10
30
40
0.025
0.075
0.125
0.080
0.155
0.095
1.0
1.4
TJ = 125°C
VGS = 10 V
15 V
175
67
8
9
10
2.5
1
3
1.5
0.175
0.2
0.125
1.5
3
0.110
0.4
0.2
0
1.8
2.0
100°C
3
3.5
4
7 V
6 V
5.5 V
6.5
7
7.5
0.225
0.25
525
55
15
35
45
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參數(shù)描述 |
|---|---|
| MMFT3055VT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
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| MMFT5P03HDT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
| MMFT6N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER 6.0 AMPERES 30 VOLTS |
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