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參數(shù)資料
| 型號(hào)： | MMFT3055VT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | LEAD FREE, CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 207K |
| 代理商： | MMFT3055VT1G |
MMFT3055V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(Cpk ≥ 2.0) (Note 3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
63
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
mAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(Cpk ≥ 2.0) (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.8
5.6
4.0
Vdc
mV/°C
Static DraintoSource OnResistance
(Cpk ≥ 2.0) (Note 3)
(VGS = 10 Vdc, ID = 0.85 Adc)
RDS(on)
0.115
0.13
W
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 1.7 Adc)
(VGS = 10 Vdc, ID = 0.85 Adc, TJ = 150°C)
VDS(on)
0.27
0.25
Vdc
Forward Transconductance (VDS = 8.0 Vdc, ID = 1.7 Adc)
gFS
1.0
2.7
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
360
500
pF
Output Capacitance
Coss
110
150
Transfer Capacitance
Crss
25
50
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 1.7 Adc,
VGS = 10 Vdc, RG = 9.1 W)
td(on)
8.0
20
ns
Rise Time
tr
9.0
20
TurnOff Delay Time
td(off)
32
60
Fall Time
tf
18
40
Gate Charge
(VDS = 48 Vdc, ID = 1.7 Adc,
VGS = 10 Vdc)
QT
13
20
nC
Q1
2.0
Q2
5.0
Q3
4.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
0.85
0.7
1.6
Vdc
Reverse Recovery Time
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
40
ns
ta
34
tb
6.0
Reverse Recovery Stored Charge
QRR
0.089
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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