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參數(shù)資料
| 型號(hào)： | MMFT3055ET1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 191K |
| 代理商： | MMFT3055ET1 |
MMFT3055E
http://onsemi.com
3
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
10
Figure 1. On Region Characteristics
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
6 V
Figure 2. GateThreshold Voltage Variation
With Temperature
TJ, JUNCTION TEMP (°C)
Figure 3. Transfer Characteristics
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 4. OnResistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 5. OnResistance versus
GatetoSource Voltage
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 6. OnResistance versus Junction
Temperature
TJ, JUNCTION TEMPERATURE (°C)
VDS = VGS
ID = 1 mA
I D
,DRAIN
CURRENT
(AMPS)
8
6
4
2
0
10
8
6
4
2
0
V
GS(TH)
,GA
TE
THRESHOLD
VOL
TAGE
(NORMALIZED)
1.1
50
1
0.9
0.8
0.7
0
50
100
150
10
I D
,DRAIN
CURRENT
(AMPS)
8
6
2
0
10
8
6
4
2
0
0.3
0
0.2
0.15
0.1
0
24
6
8
0.25
VGS = 10 V
25
°C
55
°C
0.5
0.4
0.3
0.1
0
21
15
12
9
6
3
0.3
50
0.1
0
50
100
150
0.2
18
4
0.05
5 V
TJ = 25°C
ID = 1.7 A
VGS = 10 V
ID = 1.7 A
VGS = 20 V
4.5 V
4 V
10 V
8 V
1.2
TJ = 25°C
7 V
100
°C
VDS = 10 V
25
°C
TJ = 55°C
TJ = 100°C
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