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參數(shù)資料
| 型號(hào)： | MMFT2406T |
| 廠商： | Motorola, Inc. |
| 英文描述： | MEDIUM POWER TMOS FET 700 mA 240 VOLTS |
| 中文描述： | 場(chǎng)效應(yīng)管中功率TMOS是240伏700毫安 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 90K |
| 代理商： | MMFT2406T |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N–Channel Enhancement Mode
Silicon Gate TMOS E–FET
SOT–223 for Surface Mount
This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, converters, solenoid and relay drivers. The
device is housed in the SOT–223 package which is designed for
medium power surface mount applications.
Silicon Gate for Fast Switching Speeds
High Voltage — 240 Vdc
Low Drive Requirement
The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die.
Available in 12 mm Tape and Reel
Use MMFT2406T1 to order the 7 inch/1000 unit reel.
Use MMFT2406T3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
VGS
ID
PD
240
Vdc
Gate–to–Source Voltage — Continuous
±
20
Vdc
Drain Current
Total Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
700
mAdc
1.5
12
Watts
mW/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–65 to 150
°
C
DEVICE MARKING
T2406
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)(1)
R
θ
JA
TL
83.3
°
C/W
Lead Temperature for Soldering Purposes, 1/16
″
from case
Time in Solder Bath
260
10
°
C
Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMFT2406T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
MEDIUM POWER
TMOS FET
700 mA
240 VOLTS
RDS(on) = 6.0 OHM
CASE 318E–04, STYLE 3
TO–261AA
1
2
3
4
D
G
S
REV 1
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PDF描述 |
|---|---|
| MMFT2955E | TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS |
| MMFT3055EL | MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS |
| MMFT3055VL | TMOS POWER FET 1.5 AMPERES 60 VOLT |
| MMFT3055E | MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
| MMFT3055V | TMOS POWER FET 1.7 AMPERES 60 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT2406T1 | 功能描述:MOSFET N-CH 240V 700MA SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMFT2406T1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
| MMFT2406T3 | 制造商:Rochester Electronics LLC 功能描述: |
| MMFT2406T3G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
| MMFT2955E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS |
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