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參數(shù)資料
| 型號： | MMFT3055VL |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 1.5 AMPERES 60 VOLT |
| 中文描述： | TMOS是功率場效應(yīng)晶體管1.5安培60伏 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 236K |
| 代理商： | MMFT3055VL |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement Mode
Silicon Gate TMOS E–FET
SOT–223 for Surface Mount
This advanced E–FET is a TMOS power MOSFET designed to
withstand high energy in the avalanche and commutation modes.
This device is also designed with a low threshold voltage so it is
fully enhanced with 5 Volts. This new energy efficient device also
offers a drain–to–source diode with a fast recovery time. Designed
for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT–223 package which is designed for medium
power surface mount applications.
Silicon Gate for Fast Switching Speeds
Low Drive Requirement to Interface Power Loads to Logic
Level ICs, VGS(th) = 2 Volts Max
Low RDS(on) — 0.18
max
The SOT–223 Package can be Soldered Using Wave or Re-
flow. The Formed Leads Absorb Thermal Stress During Sol-
dering, Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT3055ELT1 to order the 7 inch/1000 unit reel.
Use MMFT3055ELT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
VGS
60
Vdc
Gate–to–Source Voltage — Continuous
±
15
Drain Current — Continuous
Drain Current
— Pulsed
ID
IDM
1.5
6
Adc
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD(1)
0.8
6.4
Watts
mW/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–65 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 V, VGS = 5 V, Peak IL= 1.5 A, L = 0.2 mH, RG = 25
)
178
mJ
DEVICE MARKING
3055L
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
R
θ
JA
156
°
C/W
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
TL
260
5
°
C
Sec
(1) Power rating when mounted on FR–4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
E–FET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
Order this document
by MMFT3055EL/D
SEMICONDUCTOR TECHNICAL DATA
MEDIUM POWER
LOGIC LEVEL TMOS FET
1.5 AMP
60 VOLTS
RDS(on) = 0.18 OHM
Motorola Preferred Device
CASE 318E–04, STYLE 3
TO–261AA
D
S
G
2,4
3
1
1
2
3
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMFT3055E | MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
| MMFT3055V | TMOS POWER FET 1.7 AMPERES 60 VOLTS |
| MMFT6N03HD | TMOS POWER 6.0 AMPERES 30 VOLTS |
| MMFT960T1 | MEDIUM POWER TMOS FET 300 mA 60 VOLTS |
| MMFT960T1 | Power MOSFET 300 mA, 60 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT3055VT1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT3055VT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
| MMFT5P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS |
| MMFT5P03HDT1 | 功能描述:MOSFET P-CH 30V 3.7A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMFT5P03HDT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
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