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參數(shù)資料
| 型號(hào)： | MMFT1N10ET1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | MMFT1N10ET1 |
MMFT1N10E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250 A)
V(BR)DSS
100
—
Vdc
Zero Gate Voltage Drain Current, (VDS = 100 V, VGS = 0)
IDSS
—
10
Adc
Gate–Body Leakage Current, (VGS = 20 V, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)
VGS(th)
2
—
4.5
Vdc
Static Drain–to–Source On–Resistance, (VGS = 10 V, ID = 0.5 A)
RDS(on)
—
0.25
Ohms
Drain–to–Source On–Voltage, (VGS = 10 V, ID = 1 A)
VDS(on)
—
0.33
Vdc
Forward Transconductance, (VDS = 10 V, ID = 0.5 A)
gFS
—
2.2
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 20 V,
VGS = 0,
f = 1 MHz)
Ciss
—
410
—
pF
Output Capacitance
(VDS = 20 V,
VGS = 0,
f = 1 MHz)
Coss
—
145
—
pF
Reverse Transfer Capacitance
f = 1 MHz)
Crss
—
55
—
SWITCHING CHARACTERISTICS
Turn–On Delay Time
(VDD = 25 V, ID = 0.5 A
VGS = 10 V, RG = 50 ohms,
RGS = 25 ohms)
td(on)
—
15
—
ns
Rise Time
(VDD = 25 V, ID = 0.5 A
VGS = 10 V, RG = 50 ohms,
RGS = 25 ohms)
tr
—
15
—
ns
Turn–Off Delay Time
VGS = 10 V, RG = 50 ohms,
RGS = 25 ohms)
td(off)
—
30
—
ns
Fall Time
GS = 25 ohms)
tf
—
32
—
Total Gate Charge
(VDS = 80 V, ID = 1 A,
VGS = 10 Vdc)
See Figures 15 and 16
Qg
—
7
—
nC
Gate–Source Charge
(VDS = 80 V, ID = 1 A,
VGS = 10 Vdc)
See Figures 15 and 16
Qgs
—
1.3
—
nC
Gate–Drain Charge
See Figures 15 and 16
Qgd
—
3.2
—
SOURCE DRAIN DIODE CHARACTERISTICS(1)
Forward On–Voltage
IS = 1 A, VGS = 0
VSD
—
0.8
—
Vdc
Forward Turn–On Time
IS = 1 A, VGS = 0,
dlS/dt = 400 A/s,
VR = 50 V
ton
Limited by stray inductance
Reverse Recovery Time
dlS/dt = 400 A/s,
VR = 50 V
trr
—
90
—
ns
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT1N10ET3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MMFT2406T1 | 功能描述:MOSFET N-CH 240V 700MA SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMFT2406T1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
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