參數(shù)資料
型號(hào)： MMDT3946
廠商： LITE-ON SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-6
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 258K
代理商： MMDT3946
MMDT3946
NPN/PNP Multi-Chip Transistor
FEATURES
Ideal for low power amplification and switching
Complementary Pair
One 3904-Type NPN
One 3906-Type PNP
MECHANICAL DATA
Case: SOT-363 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
NPN 3904_Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
5
V
Collector Current -Continuous
IC
200
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
NPN 3904_Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=10A,IE=0
VCBO
60
V
Collector-emitter breakdown voltage
IC=1mA,IB=0
VCEO
40
V
Emitter-base breakdown voltage
IE=10A,IC=0
VEBO
5
V
Collector-base cut-off current
VCB=30V,IE=0
ICBO
0.05
uA
Collector-base cut-off current
VCE=30V,IB=0
ICEO
0.5
uA
Emitter-base cut-off current
VEB=5V,IC=0
IEBO
0.05
uA
VCE=1V,IC=0.1mA
hFE1
40
V
VCE=1V,IC=1mA
hFE2
70
V
VCE=1V,IC=10mA
hFE3
100
300
V
VCE=1V,IC=50mA
hFE4
60
V
DC current gain
VCE=1V,IC=100mA
hFE5
30
V
IC=10mA,IB=1mA
VCE(sat)1
0.2
V
Collector-emitter saturation voltage
IC=50mA,IB=5mA
VCE(sat)2
0.3
V
IC=10mA,IB=1mA
VBE(sat)1
0.65
0.85
V
Base-emitter saturation voltage
IC=50mA,IB=5mA
VBE(sat)2
0.95
V
Transition frequency
VCE=20V,IC=20mA,
f=100MHz
fT
300
MHz
Collector output capacitance
VCB=5V,IE=0,f=1MHz
Cob
4
pF
Noise figure
VCE=5V,IC=0.1mA,f=1kHz,
RS=1K
NF
5
dB
Delay time
Td
35
nS
Rise time
VCC=3V, VBE=-0.5V
IC=10mA , IB1=-IB2=1mA
Tr
35
nS
Storage time
Ts
200
nS
Fall time
VCC=3V, IC=10mA
IB1=-IB2=1mA
Tf
50
nS
相關(guān)PDF資料
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MMDT4126-13 200 mA, 25 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDT3946_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3946_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT3946-7 功能描述:兩極晶體管 - BJT 40 / 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT3946-7-F 功能描述:兩極晶體管 - BJT 40 / 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT3946G-AL6-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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