參數(shù)資料
型號(hào)： MMDT2222AT/R13
元件分類： 小信號(hào)晶體管
英文描述： 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, ULTRA SMALL, SC-70, 6 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 161K
代理商： MMDT2222AT/R13
V = 30V, I =150mA
V (off) = -0.5V, I = 15mA
-
I = 10uA
www.panjit.com
1/
14/2009
Page 2
ELECTRICAL CHARACTERISTICS (Each Transistor) T = 25°C Unless otherwise noted
J
C
Parameter
Symbol
Min
Units
Collector-Emitter Breakdown Voltage
Conditions
Typ
Max
V(BR)CEO
40
-
V
C
75
-
V
Note 2. Short duration test pulse used to minimize self-heating
(BR)CBO
V
Collector-Base Breakdown Voltage
I = 10mA
I = 10uA
E
Emitter-Base Breakdown Voltage
(BR)EBO
V
V = 60V, V = 3.0V
EB
CE
ICEX
Collector Cutoff Current
6.0
-
V
-
10
nA
Base Cutoff Current
IBL
DC Current Gain (Note 2)
h FE
-
20
nA
-
0.3
V
-
1.0
V
35
-
Collector-Emitter Saturation
Voltage (Note 2)
CE(SAT)
V
I = 150mA, I = 15mA
CB
I = 500mA, I = 50mA
CB
Base-Emitter Saturation Voltage
(Note 2)
BE(SAT)
V
0.6
-
1.2
V
-
2.0
Gain-Bandwidth Product
T
f
300
-
MHz
Collector-Base Capacitance
CBO
C
-
8.0
pF
CB
V = 10V, f =1.0MHz
V = 20V, I = 20mA
f = 100MHz
Emitter-Base Capacitance
EBO
C-
-
25
pF
EB
V = 0.5V, f =1.0MHz
MMDT2222A
50
-
75
-
50
-
100
-
300
I = 0.1mA, V = 10V
CE
C
Delay Time
d
t-
-
10
ns
CC
Rise Time
r
t-
-
25
ns
Storage Time
s
t
-
225
ns
Fall Time
f
t
-
60
ns
V = 60V, V = 3.0V
EB
CE
I = 1.0mA, V = 10V
CE
C
I = 10mA, V = 10V
CE
C
I =10mA, V =10V, T =-55C
CE
C
I = 150mA, V = 10V
CE
C
I = 150mA, I = 15mA
CB
I = 500mA, I = 50mA
CB
C
CE
BE
C
B1
V = 30V, I =150mA
I = I = 15mA
CC
C
B2
B1
40
-
I = 500mA, V = 10V
CE
C
35
-
I = 150mA, V = 1.0V
CE
C
J
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