- 您現(xiàn)在的位置：買賣IC網 > PDF目錄95978 > MMDT2222V (MICRO COMMERCIAL COMPONENTS) 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MMDT2222V |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 650K |
| 代理商： | MMDT2222V |
MMDT2222V
NPN
Plastic-Encapsulate
Transistors
Features
Epitaxial Die Construction
Complementary PNP Type Available (MMDT2907V)
Ultra-small Surface Mount Package
Lead Free Plating
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
0.6
A
PC
Collector Dissipation
0.15
W
RθJA
Thermal Resistance Junction to Ambient
833
℃/W
TJ
Operating Junction Temperature
-55 to +150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
75
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
6
---
Vdc
ICBO
Collector Cutoff Current
(VCB=60Vdc, IE=0Vdc)
---
10
nAdc
ICEX
Collector Cutoff Current
(VCE=60Vdc,VEB(OFF)=3Vdc)
---
10
nAdc
IEBO
Emitter Cutoff Current
(VEB=3Vdc, IC=0Vdc)
---
10
nAdc
IBL
Base Cutoff Current
(VCE=60Vdc,VEB(OFF)=3Vdc)
---
20
nAdc
hFE
DC Current Gain
(IC=0.1mAdc, VCE=10Vdc)
(IC=1mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)
(IC=500mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=1Vdc)
35
50
75
100
40
35
---
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
---
0.3
1.0
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
0.6
---
1.2
2.0
Vdc
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
www.mccsemi.com
Revision: 1
2005/01/25
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.006
.011
0.15
0.30
B
.043
.049
1.10
1.25
C
.061
.067
1.55
1.70
D
.020
0.50
G
.035
.043
0.90
1.10
H
.059
.067
1.50
1.70
K
.022
.023
0.56
0.60
L
.004
.011
0.10
0.30
M
.004
.007
0.10
0.18
SOT-563
TM
Micro Commercial Components
相關PDF資料 |
PDF描述 |
|---|---|
| MMDT2227A | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2227AT/R7 | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2227 | 600 mA, 40 V, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2227 | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2907A-TP | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMDT2222V_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2222V-7 | 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT2222V-7-F | 制造商:Diodes Incorporated 功能描述:TRANS GP BJT NPN 40V 0.6A 6PIN SOT-563 - Tape and Reel |
| MMDT2222V-TP | 功能描述:TRANSISTOR NPN DUAL 40V SOT563 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MMDT2227 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Multi-Chip Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。