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參數(shù)資料
| 型號(hào)： | MMDJ3N03BJTR2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封裝： | MINIATURE, PLASTIC, CASE 751-07, SOIC-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MMDJ3N03BJTR2G |
Plastic Power Transistors
SO8 for Surface Mount Applications
Collector Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain —
hFE= 85 (Min) @ IC = 0.8 Adc
= 60 (Min) @ IC = 3.0 Adc
Low Collector Emitter Saturation Voltage —
VCE(sat) = 0.18 Vdc (Max) @ IC = 1.2 Adc
= 0.45 Vdc (Max) @ IC = 3.0 Adc
Miniature SO8 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorBase Voltage
VCB
45
Vdc
CollectorEmitter Voltage
VCEO
30
Vdc
EmitterBase Voltage
VEB
±6.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
3.0
5.0
Adc
Base Current — Continuous
IB
1.0
Adc
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction to Ambient on 1
″ sq. (645 sq. mm)
Collector pad on FR4 board material with one die operating.
Thermal Resistance Junction to Ambient on 0.012
″ sq. (7.6 sq. mm)
Collector pad on FR4 board material with one die operating.
R
θJA
100
185
_C/W
Total Power Dissipation @ TA = 25_C mounted on 1″ sq. (645 sq. mm)
Collector pad on FR4 board material with one die operating.
Derate above 25
_C
PD
1.25
10
Watts
mW/
_C
Maximum Temperature for Soldering
TL
260
_C
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
t
Semiconductor Components Industries, LLC, 2001
April, 2001 Rev. 4
730
Publication Order Number:
MMDJ3N03BJT/D
MMDJ3N03BJT
DUAL BIPOLAR
POWER TRANSISTOR
NPN SILICON
30 VOLTS
3 AMPERES
CASE 75107, Style 16
(SO8)
ON Semiconductor Preferred Device
Emitter1
1
2
3
4
8
7
6
5
Top View
Pinout
Base1
Emitter2
Base2
Collector1
Collector2
C
B
E
C
B
E
Schematic
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
| MMDJ-65608EV-30 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-30-E | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-45 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608L-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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