參數(shù)資料
型號(hào)： MMDT4413
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號(hào)晶體管
英文描述： 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-6
文件頁數(shù)： 1/6頁
文件大?。?/td> 0K
代理商： MMDT4413
MMDT4413
NPN/PNP
Plastic-Encapsulate
Transistors
Features
Maximum Ratings @ 25OC Unless Otherwise Specified
Rating
Unit
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
0.6
A
PC
Collector Dissipation
0.2
W
TJ
Operating Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
NPN 4401 Section
Parameter
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0)
40
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
60
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=100uAdc, IC=0)
6
---
Vdc
ICBO
Collector Cutoff Current
(VCB=50Vdc,IE=0)
---
0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=-5Vdc,IC=0)
---
0.1
uAdc
hFE
DC Current Gain
(IC=0.1mAdc, VCE=1Vdc)
(IC=1mAdc, VCE=1Vdc)
(IC=10mAdc, VCE=1Vdc)
(IC=150mAdc, VCE=1Vdc)
(IC=500mAdc, VCE=2Vdc)
20
40
80
100
40
---
----
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
---
0.75
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
0.75
---
1.2
Vdc
fT
Current Gain-Bandwidth Product
(VCE=10.0Vdc, IC=20mAdc, f=100MHz)
250
---
MHz
Cob
Output Capacitance
(VCB=5Vdc, f=1.0MHz, IE=0)
td
Delay Time
---
15
ns
tr
Rise Time
VCC=30V,IC=150mA,
VBE=2.0V, IB1=15.00mA
tS
Storage Time
---
225
ns
tf
Fall Time
VCC=30V, IC=150mA,
IB1=-IB2=15mA
---
30
ns
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.004
.012
0.10
0.30
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026
0.65Nominal
F
.012
.016
0.30
0.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.039
0.90
1.00
L
.010
.016
0.25
0.40
M
.004
.016
0.10
0.25
J
M
A
C
B
G
H
K
D
F
Revision: 1
2007/09/27
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
Epitaxial Planar Die Construction
One 4401-Type NPN ,One 4403-Type PNP
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking:K13
www.mccsemi.com
1 of 6
SOT-363
NPN 4401 Section
RthJA
Thermal Resistance Junction to Ambient Air
625
W
0.4
0.95
20
ns
Symbol
6.5
---
pF
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MMDT4413_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4413_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4413-7 功能描述:兩極晶體管 - BJT 40 / 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT4413-7-F 功能描述:兩極晶體管 - BJT 40 / 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT4944 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Dual-Chip Plastic Encapsulated Transistor
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