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參數(shù)資料
| 型號： | MMDF2N02ER2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 3.6 A, 25 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 276K |
| 代理商： | MMDF2N02ER2 |
MMDF2N02E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
V(BR)DSS
25
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc
VGS(th)
1.0
2.0
3.0
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
—
0.083
0.110
0.100
0.200
Ohm
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
1.0
2.6
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
380
532
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
235
329
Transfer Capacitance
f = 1.0 MHz)
Crss
—
55
110
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 )
td(on)
—
7.0
21
ns
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 )
tr
—
17
30
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 6.0 )
td(off)
—
27
48
Fall Time
G = 6.0 )
tf
—
18
30
Turn–On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 9.1 )
td(on)
—
10
30
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 9.1 )
tr
—
35
70
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 9.1 )
td(off)
—
19
38
Fall Time
G = 9.1 )
tf
—
25
50
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
QT
—
10.6
30
nC
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q1
—
1.3
—
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q2
—
2.9
—
Q3
—
2.7
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
—
1.0
1.4
Vdc
Reverse Recovery Time
See Figure 11
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
34
66
ns
See Figure 11
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
17
—
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
17
—
Reverse Recovery Storage Charge
QRR
—
0.03
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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