參數(shù)資料
型號: MMBZ18VCL/DG
廠商: NXP SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: TVS DIODE, TO-236AB
封裝: HALOGEN FREE, PLASTIC, SMD, 3 PIN
文件頁數(shù): 14/15頁
文件大小: 79K
代理商: MMBZ18VCL/DG
MMBZXVCL_MMBZXVDL_SER_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 September 2008
8 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
[1]
In accordance with IEC 61643-321 (10/1000
s current waveform).
[2]
Measured from pin 1 or 2 to pin 3.
SZ
temperature coefcient
IZ =1mA
MMBZ12VDL
MMBZ12VDL/DG
-
8.1
-
mV/K
MMBZ15VDL
MMBZ15VDL/DG
-
11
-
mV/K
MMBZ18VCL
MMBZ18VCL/DG
-
14
-
mV/K
MMBZ20VCL
MMBZ20VCL/DG
-
15.8
-
mV/K
MMBZ27VCL
MMBZ27VCL/DG
-
23
-
mV/K
MMBZ33VCL
MMBZ33VCL/DG
-
29.4
-
mV/K
Table 10.
Characteristics …continued
Tamb =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
MMBZ27VCL: unidirectional and bidirectional
Tamb =25 °C
Fig 3.
Rated peak pulse power as a function of
exponential pulse duration (rectangular
waveform); typical values
Fig 4.
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
006aab327
102
10
103
PPPM
(W)
1
tp (ms)
102
103
102
101
10
1
Tj (°C)
0
200
150
50
100
006aab321
0.4
0.8
1.2
PPPM
0
PPPM(25°C)
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