參數(shù)資料
型號： MMBTH10
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大小： 326K
代理商： MMBTH10
MMBTH10
NPN VHF/UHF
Transistors
Features
Designed for VHF/UHF Amplifier applications and high output VHF
Oscillators
High current gain bandwidth product
Marking Code: 3EM
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current-Continuous
(1)
50
mA
PC
Power dissipation
(2)
225
mW
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
25
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
30
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
3.0
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=25Vdc,IE=0)
---
100
nAdc
IEBO
Emitter-Base Cutoff Current
(VEB=2.0Vdc, IC=0)
---
100
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC=4.0mAdc, VCE=10Vdc)
60
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=4.0mAdc, IB=400uAdc)
---
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=4.0mAdc,VCE=10Vdc)
---
0.95
Vdc
SMALL SIGNAL CHARACTERISTICS
fT
Current-Gain-Bandwidth Product
(VCE=10V, f=100MHz, IC=4.0mA )
650
---
MHz
CCB
Collector-Base Capacitance
(VCB=10V, f=1.0MHz, IE=0)
---
0.7
pF
CRB
Collector-Base Feedback Capacitance
(VCB=10V, f=1.0MHz, IE=0)
---
0.65
pF
Note: 1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width<300us, duty cycle<2%
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
Revision: 3
2006/05/13
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTH10 制造商:Fairchild Semiconductor Corporation 功能描述:RF BIPOLAR TRANSISTOR SOT-23
MMBTH10_Q 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTH10-4LT1 功能描述:兩極晶體管 - BJT 25V VHF Mixer NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTH10-4LT1G 功能描述:兩極晶體管 - BJT 25V VHF Mixer NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTH10-7 功能描述:兩極晶體管 - BJT 25V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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