參數(shù)資料
型號(hào)： MMBTH10
廠商： LITE-ON SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 1/1頁
文件大?。?/td> 25K
代理商： MMBTH10
ADVANCE
INFORMATION
DS31031 Rev. 1P-0
1 of 1
MMBTH10
MMBTH10
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Designed for VHF/UHF Amplifier Applications
and High Output VHF Oscillators
High Current Gain Bandwidth Product
Ideal for Mixer and RF Amplifier Applications
with collector currents in the 100
A - 30 mA
Range
Characteristic
Symbol
MMBTH10
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current - Continuous (Note 1)
IC
50
mA
Power Dissipation (Note 1)
Pd
225
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
556
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
C
E
B
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K3H
Weight: 0.008 grams (approx.)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
Note:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
≤ 300s, duty cycle ≤ 2%.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
V
IC = 1mA IB = 0
Collector-Base Breakdown Voltage
V(BR)CBO
30
V
IC = 100
A, IE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
3.0
V
IE = 10
A, IC = 0
Collector Cutoff Current
ICBO
100
nA
VCB = 25V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 2V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
60
IC = 4mA, VCE = 10.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5
V
IC = 4mA, IB = 400
A
Base- Emitter On Voltage
VBE(SAT)
0.95
V
IC = 4mA, VCE = 10.0V
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
650
MHz
VCE = 10V, f = 100MHz, IC = 4mA
Collector-Base Capacitance
CCB
0.7
pF
VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Feedback Capacitiance
CRB
0.65
pF
VCB = 10V, f = 1.0MHz, IE = 0
Collector-Base Time Constant
Rb’Cc
9ps
VCB = 10V, f =31.8MHz, IC = 4mA
POWER SEMICONDUCTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTH10 制造商:Fairchild Semiconductor Corporation 功能描述:RF BIPOLAR TRANSISTOR SOT-23
MMBTH10_Q 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTH10-4LT1 功能描述:兩極晶體管 - BJT 25V VHF Mixer NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTH10-4LT1G 功能描述:兩極晶體管 - BJT 25V VHF Mixer NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTH10-7 功能描述:兩極晶體管 - BJT 25V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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